Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN
نویسندگان
چکیده
Shubnikov–de-Haas oscillation is observed in a polarization-doped three-dimensional electron slab in a graded AlxGa1!xN semiconductor layer. The electron slab is generated by the technique of grading the polar semiconductor alloy with spatially changing polarization. Temperature-dependent oscillations allow us to extract an effective mass of m*"0.21m0. The quantum scattering time measured (#q"0.3 ps) is close to the transport scattering time (# t"0.34 ps), indicating the dominance of short-range scattering. Alloy scattering is determined to be the dominant mechanism-limiting mobility; this enables us to extract an alloy-scattering parameter of V0"1.8 eV for the AlxGa1!xN material system. Polarization-doping presents an exciting technique for creating electron slabs with widely tunable density and confinement for the study of dimensionality effects on charge transport and collective phenomena.
منابع مشابه
Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN
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تاریخ انتشار 2015